Back to Search
Start Over
Monitoring hot-carrier degradation in SOI MOSFET's by...
- Source :
-
IEEE Transactions on Electron Devices . May98, Vol. 45 Issue 5, p1135. 5p. 11 Graphs. - Publication Year :
- 1998
-
Abstract
- Addresses the problem of hot-carrier degradation and lifetime monitoring in silicon-on-insulator (SOI) metal oxide semiconductor field-effect transistors (MOSFET). Devices fabrication and experimental setup; Emission characteristics; Correlation between emission and degradation; Conclusions.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 45
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 538623
- Full Text :
- https://doi.org/10.1109/16.669568