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Fully-depleted SOI CMOS for analog applications.
- Source :
-
IEEE Transactions on Electron Devices . May98, Vol. 45 Issue 5, p1010. 7p. 2 Diagrams, 2 Charts, 6 Graphs. - Publication Year :
- 1998
-
Abstract
- Describes the advantages of using fully-depleted (FD) silicon-on-insulator (SOI) for analog applications at low and high frequencies. Voltage gain of a metal-oxide semiconductor field-effect transistors (MOSFET); Information on basic analog circuits; Details on microwave devices; Conclusion.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 45
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 538605
- Full Text :
- https://doi.org/10.1109/16.669511