Estudio de los procesos dispersivos en pozos cuánticos de In-GaAs/InAlAs por medio de las técnicas de fotorreflectancia y fotoluminiscencia.

In this work we present the study of the dispersive processes in InGaAs/InAlAs quantum wells using the photoreflectance (PR) and photoluminescence (PL) techniques. The samples of InGaAs/InAlAs were grown by the Metal Organic Chemical Vapor Deposition (MOCVD) with wells widths ranging from 6,5 nm to 10,5 nm. PR spectra were measured in the temperature range from 220 K to 300 K and the PL spectra in the temperature range from 11K to 300K. There was a comparative analysis of the line shapes of the PR and PL spectras. We found inhomogeneus broadening in these spectras, which were atributed to the local stresses in the well barrier interface. From the analysis, we identified that the main dispersive process present in the studied optical transitions, is due to the exciton-phonon interaction [ABSTRACT FROM AUTHOR]