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Study of extrinsic interface states at the AL/Si interface from capacitance-voltage characteristics.

Authors :
Srivastava, P.C.
Singh, U.P.
Source :
International Journal of Electronics. Jan1990, Vol. 68 Issue 1, p69. 5p.
Publication Year :
1990

Abstract

Studies the frequency-dependent current-voltage characteristics of water treated Al/Si(n) junctions. Preparation of Al/Si interfaces; Extrinsic interface state capacitance at the Al/Si interface; Quantitative estimation of the density of states, energies in the forbidden gap of the semiconductors and capture cross-section for the states; Charge exchange between the interface states and the conduction band.

Details

Language :
English
ISSN :
00207217
Volume :
68
Issue :
1
Database :
Academic Search Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
5367969
Full Text :
https://doi.org/10.1080/00207219008921147