On the carrier generation-recombination in the space-charge region of a p-n junction.

In this paper the gradual capture effect on the generation-recombination current in the space-charge region for an asymmetrical junction is studied. The theory is applied to the p<SUP+>-n InSb diodes. At forward bias, when the lifetime increases in the direction from p<SUP+> region to n region, the results we have obtained show that the current increases more rapidly with voltage than in the reverse case.
In this paper we shall take into account the gradual capture effect on the generation-recombination current in the space-charge region for an asymmetrical junction. [ABSTRACT FROM AUTHOR]