On the p-n junctions in the electric and magnetic fields.

The p-n junction in the electric and magnetic fields is studied. The results obtained show that the magnetosensitivity of the high-level current is greater than the magnetosensitivity of the low-level current. The influence of the electric field of the neutral regions on the I-V characteristics of p-n junctions is discussed.
The theory of the p-n junctions was given by Shoekley (1949). The voltage dependence of the arbitrary-level current has also been considered in later publications (Jonscher 1958, Stafeev I959, van Vliet 1966, Barber 1969).
In p-n junctions with large basewidth it was observed that there was an increase in the magnetosensitivity of the high-level current (Melngailis and Redicker 1962, Karakushan and Stafeev 1964). The magnetosensitivity of the current depends on the ratio of basewidth to carrier diffusion length.
It is the purpose of this paper to present an analytic treatment of the p-n junction situated in electric and magnetic fields at low and high injection levels. [ABSTRACT FROM AUTHOR]