On the p-n-p tansistors at variable signals.

The influence of gradual capture on the <agr> cut-off frequency of p-n-p transistors is studied.
The results obtained show that the p-n-p transistor with narrow base in which the lifetime increases in the direction of the hole diffusion may be used at higher frequencies than the p-n-p transistor in which a reverse situation occurs.
The theory of p-n junctions and transistors was given by Shockley (1949). The p-n-p transistors with variable signals have also been considered in later publications (Zawels 1954, Giacoletto 1954, Lo et al. 1956).
Recently, Dolocan has considered the role of gradual capture in p-n junctions with variable signals (1968) and with d.c. signals (1969). It is the purpose of this paper to present an analytic treatment of p-n-p transistors with variable signals by taking into account the gradual distribution of the capture centres' concentration. [ABSTRACT FROM AUTHOR]