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The development of a gate assisted turn-off thyristor for use in high frequency applications.
- Source :
-
International Journal of Electronics . Mar1974, Vol. 36 Issue 3, p399. 18p. 6 Diagrams, 3 Charts, 1 Graph. - Publication Year :
- 1974
-
Abstract
- The development of a high power, high frequency, inverter thyristor is described. <BR> The techniques and procedures used to achieve forward blocking recovery times of less than 2 microseconds are summarized, and electrical test data are included to show that other thyristor parameters are not too adversely impaired. <BR> This paper is concerned with the general problems involved in the design of high frequency thyristors, and briefly describes the techniques used to develop this particular device. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THYRISTORS
*ELECTRONIC modulators
*GATE array circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00207217
- Volume :
- 36
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- International Journal of Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 5251791
- Full Text :
- https://doi.org/10.1080/00207217408900420