Corbino effect in double- and single-injection structures.

The Corbino effect is calculated for concentric cylindrical semiconductor devices which operate under double- and single-injection. For the two carrier structures, the I-V characteristics are represented by an Proportional to<agr>V<SUPn> relationship where <agr>= (1+<mgr>p<mgr>n B<SUBz><SUP2>)/[1+(<mgr><SUBp>B<SUBz>)<SUP2>][1+(<mgr><SUBn>B<SUBz>)<SUP2 >] and n=2 for the semiconductor regime and n=3 for the insulator regime.
Similar results are obtained for single-injection space-charge-limited current where n=2 and <agr>=[1+(<mgr>B<SUBz>)<SUP2>]<SUP-1>.
The present paper describes the effects of a transverse magnetic field on the I-V relationships of double- and single-injection structures which have a concentric cylindrical geometry. The device configuration is a hollow-core coaxial semiconductor with carrier injecting contacts at the inner and outer surfaces of the annulus. At low-injection levels, the I-V relationships are linear and a magnetic field applied perpendicular to the radial direction causes the charge carriers to follow spiral path-lengths between the inner and peripheral contacts (Corbino 1911).
As the injection levels are increased, the I-V relationships are no longer linear because the excess carriers injected into the concentric cylindrical semiconductor lead to various double- and single-injection phenomena. The main purpose is to obtain an estimate of the influence of a magnetic field on the I-V characteristics of annular structures which operate under these high-level injection conditions. [ABSTRACT FROM AUTHOR]