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Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2008 Part 1 of 2, Vol. 55 Issue 6, p3032-3038. 7p. 1 Diagram, 7 Graphs. - Publication Year :
- 2008
-
Abstract
- Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes. [ABSTRACT FROM PUBLISHER]
- Subjects :
- *OXIDES
*IRRADIATION
*HYDROGEN
*RADIATION
*HYDROGENATION
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 55
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 52037653
- Full Text :
- https://doi.org/10.1109/TNS.2008.2006972