Heteroepitaxial silicon film growth at 600°C from an Al–Si eutectic melt

Authors :: Chaudhari, P.
Shim, Heejae
Wacaser, Brent A.
Reuter, Mark C.
Murray, Conal
Reuter, Kathleen B.
Jordan-Sweet, Jean
Ross, Frances M.
Guha, Supratik
Source :: Thin Solid Films. Jul2010, Vol. 518 Issue 19, p5368-5371. 4p.
Publication Year :: 2010
Abstract: Abstract: A method for growing heteroepitaxial Si films on sapphire was developed using a 6nm thin Al layer at substrate temperature of 600°C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490°C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. [Copyright &y& Elsevier]