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A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
- Source :
-
Semiconductors . Jun2010, Vol. 44 Issue 6, p808-811. 4p. 1 Diagram, 4 Graphs. - Publication Year :
- 2010
-
Abstract
- A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 44
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 51708341
- Full Text :
- https://doi.org/10.1134/S1063782610060205