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Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication
- Source :
-
Infrared Physics & Technology . Jul2010, Vol. 53 Issue 4, p236-245. 10p. - Publication Year :
- 2010
-
Abstract
- Abstract: In this paper we report an analytical modeling of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS™ and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS™ from SILVACO® international. The photodetector exhibits a high quantum efficiency ∼90%, responsivity ∼1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ∼5×109 cmHz1/2 W−1at wavelength 1.55–1.65μm, dark current of the order of 10−11 A at reverse bias of 1.5V and 10−13–10−12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5×10−14 W. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 13504495
- Volume :
- 53
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Infrared Physics & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 51437873
- Full Text :
- https://doi.org/10.1016/j.infrared.2010.03.003