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Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy
- Source :
-
Current Applied Physics . Sep2010, Vol. 10 Issue 5, p1336-1339. 4p. - Publication Year :
- 2010
-
Abstract
- abstract: The chemical states of Bi (6 at.%)-doped GeTe thin film (GBT) in structural phase transition were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). Clean amorphous GBT was phase changed to the NaCl-type crystalline structure by in-situ annealing under ultrahigh vacuum, during which transition, the binding energy and shape of the Te 4d core-level showed no changes, the Ge 3d core-level showed a spin-orbit split-enhanced feature with negligible chemical shift, and the Bi 4f core-level became narrower and shifted towards the higher binding energy side by 0.25 eV. We suggest that as the film phase changed to the meta-stable crystalline structure, the Ge and Bi atoms moved to more constrained sites in the electron configuration. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 10
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 51401889
- Full Text :
- https://doi.org/10.1016/j.cap.2010.04.004