Erratum: “Thin-film transistors based on p-type Cu2O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)].

MLA

Fortunato, Elvira, et al. “Erratum: ‘Thin-Film Transistors Based on p-Type Cu2O Thin Films Produced at Room Temperature’ [Appl. Phys. Lett. 96, 192102 (2010)].” Applied Physics Letters, vol. 96, no. 23, June 2010, p. 239902. EBSCOhost, https://doi.org/10.1063/1.3449139.

APA

Fortunato, E., Figueiredo, V., Barquinha, P., Elamurugu, E., Barros, R., Gonçalves, G., Park, S.-H. K., Hwang, C.-S., & Martins, R. (2010). Erratum: “Thin-film transistors based on p-type Cu2O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]. Applied Physics Letters, 96(23), 239902. https://doi.org/10.1063/1.3449139

Chicago

Fortunato, Elvira, Vitor Figueiredo, Pedro Barquinha, Elangovan Elamurugu, Raquel Barros, Gonçalo Gonçalves, Sang-Hee Ko Park, Chi-Sun Hwang, and Rodrigo Martins. 2010. “Erratum: ‘Thin-Film Transistors Based on p-Type Cu2O Thin Films Produced at Room Temperature’ [Appl. Phys. Lett. 96, 192102 (2010)].” Applied Physics Letters 96 (23): 239902. doi:10.1063/1.3449139.