Semi-Empirical Phonon Scattering Model.

Bulk phonon limited mobility in silicon based MOSFETs, have long been observed to demonstrate a -1/3rd dependence on the effective transverse field at room and higher temperatures. However, despite significant effort, existing phonon scattering models fail to reproduce this dependence. This paper reports on the impact of approximations used in the calculation of the intra-valley scattering rate in existing models which causes a much reduced dependence of phonon limited mobility on the effective field. An expression for scattering rate in the absence of such approximations is derived. The improvement of the new complex model is however, insufficient to match experiment. To improve the situation an empirical model is proposed with deformation potentials dependent on the inversion sheet concentration. [ABSTRACT FROM AUTHOR]