Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs.

MLA

Mayuzumi, Satoru, et al. “Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel PFETs.” IEEE Transactions on Electron Devices, vol. 57, no. 6, June 2010, pp. 1295–300. EBSCOhost, https://doi.org/10.1109/TED.2010.2045703.

APA

Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Nagata, K., Akamatsu, H., Wakabayashi, H., Amari, K., Tateshita, Y., Tsukamoto, M., Ohno, T., Ogura, A., & Nagashima, N. (2010). Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs. IEEE Transactions on Electron Devices, 57(6), 1295–1300. https://doi.org/10.1109/TED.2010.2045703

Chicago

Mayuzumi, Satoru, Shinya Yamakawa, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Hitoshi Wakabayashi, et al. 2010. “Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel PFETs.” IEEE Transactions on Electron Devices 57 (6): 1295–1300. doi:10.1109/TED.2010.2045703.