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Structural and electronic properties of amorphous InSb from first principles study
- Source :
-
Physica B . May2010, Vol. 405 Issue 10, p2481-2484. 4p. - Publication Year :
- 2010
-
Abstract
- Abstract: The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of “continuous random networks” (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 405
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 50263263
- Full Text :
- https://doi.org/10.1016/j.physb.2010.03.017