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The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate
- Source :
-
Applied Surface Science . Apr2010, Vol. 256 Issue 13, p4304-4309. 6p. - Publication Year :
- 2010
-
Abstract
- Abstract: Al-doped ZnO (ZnO:Al) thin films with different Al contents were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. X-ray diffraction (XRD) measurements showed that the crystallinity of the films was promoted by appropriate Al content (0.75wt.%). Then the ZnO:Al film with Al content of 0.75wt.% was annealed in vacuum at different temperatures. XRD patterns revealed that the residual compressive stress decreased at higher annealing temperatures. While the surface roughness of the ZnO:Al film annealed at 300°C became smoother, those of the ZnO:Al films annealed at 600 and 750°C became rougher. The photoluminescence (PL) measurements at room temperature revealed a violet, two blue and a green emission. The origin of these emissions was discussed and the mechanism of violet and blue emission of ZnO:Al thin films were suggested. We concluded that the defect centers are mainly ascribed to antisite oxygen and interstitial Zn in annealed (in vacuum) ZnO:Al films. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 256
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 49810531
- Full Text :
- https://doi.org/10.1016/j.apsusc.2010.02.021