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A magnetoelectric memory cell with coercivity state as writing data bit.
- Source :
-
Applied Physics Letters . 4/19/2010, Vol. 96 Issue 16, p162505. 3p. 4 Graphs. - Publication Year :
- 2010
-
Abstract
- Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field Hc states (i.e., low-Hc and high-Hc) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93Ge0.07 film grown on fully poled ferroelectric BiScO3-PbTiO3 substrate, exhibiting a large electric-field modulation of Hc, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field Hc information written by electric fields is demonstrated by using magnetoresistance read head. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SPINTRONICS
*MAGNETIC fields
*MAGNETIZATION
*THIN films
*ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 96
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 49807519
- Full Text :
- https://doi.org/10.1063/1.3405722