A Study on the Structural Change of Al—N Co-Doped ZnO Thin Films.

The co-doped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200° C to 600° C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by atomic force microscopy (AFM), scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) and X—ray diffraction (XRD). Film roughness (r.m.s) and grain shape were found to be correlated with the annealing temperatures. SEM result has shown that its surface characteristics are strongly influenced by annealing temperatures. [ABSTRACT FROM AUTHOR]