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Electrical characterization of GaN/SiC n-p heterojunction diodes.
- Source :
-
Applied Physics Letters . 3/16/1998, Vol. 72 Issue 11. 1 Chart, 3 Graphs. - Publication Year :
- 1998
-
Abstract
- GaN/SiC heterojunction diodes have been fabricated and characterized. Epitaxial n-type GaN films were grown using metalorganic chemical vapor deposition (MOCVD) and electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) on p-type Si-face 6H-SiC wafers. The I–V characteristics have diode ideality factors and saturation currents as low as 1.2 and 10[sup -32] A/cm[sup 2], respectively. The built-in potential in the MOCVD- and ECR-MBE-grown n-p heterojunctions was determined from capacitance–voltage measurements at 2.90±0.08 eV and 2.82±0.08 eV, respectively. From the built-in potential the energy band offsets for GaN/SiC heterostructures are determined at ΔE[sub C]=0.11±0.10 eV and ΔE[sub V]=0.48±0.10 eV. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM nitride
*SILICON carbide
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 72
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4872627
- Full Text :
- https://doi.org/10.1063/1.121058