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Kinetics of strain relaxation through misfit dislocation formation in the growth of epitaxial films on compliant substrates.
- Source :
-
Applied Physics Letters . 8/10/1998, Vol. 73 Issue 6, p753. 3p. 1 Diagram, 1 Graph. - Publication Year :
- 1998
-
Abstract
- A phenomenological mean-field theory is presented for the kinetics of strain relaxation due to misfit dislocation generation in the strained-layer growth of epitaxial semiconductor films on thin compliant substrates. The theory provides a generalized dislocation kinetic framework by coupling the mechanics of an epitaxial film on a compliant substrate with a well-known description of plastic deformation dynamics in semiconductor crystals. The theoretical results reproduce successfully recent experimental data for strain relaxation in the InAs/GaAs(110) heteroepitaxial system. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DISLOCATIONS in crystals
*EPITAXY
*PHENOMENOLOGICAL theory (Physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 73
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4872314
- Full Text :
- https://doi.org/10.1063/1.121990