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BST FILMS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION INCORPORATING REAL-TIME CONTROL OF STOICHIOMETRY.

Authors :
BOYD, DAVID A.
HIRSCH, S. G.
HUBBARD, C.
COLE, M. W.
Source :
Integrated Ferroelectrics. 2009, Vol. 111 Issue 1, p17-26. 10p. 3 Black and White Photographs, 5 Charts, 4 Graphs.
Publication Year :
2009

Abstract

We present preliminary results of metal organic chemical vapor deposition (MOCVD) growth of BaxSr1-xTiO3 (BST) thin films. Films were deposited on MgO, sapphire, Si, and Si/Pt/Ti substrates. Real-time monitoring of the precursor flux by UV absorption spectroscopy was used to control the composition of the films over the range 30 ≤ x ≤ 80. The films were characterized for a number of attributes including composition, crystalline structure, and morphology. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10584587
Volume :
111
Issue :
1
Database :
Academic Search Index
Journal :
Integrated Ferroelectrics
Publication Type :
Academic Journal
Accession number :
48675416
Full Text :
https://doi.org/10.1080/10584580903586638