A new temperature stable microwave dielectric with low-firing temperature in Bi2MoO6–TiO2 system

Abstract: A new temperature stable microwave dielectric with low-firing temperature in xBi2MoO6–(1− x)TiO2 system was prepared by conventional solid state reaction method. The crystalline phases, sintering behavior, microwave dielectric properties of xBi2MoO6–(1− x)TiO2 ceramics were studied. All the xBi2MoO6–(1− x)TiO2 ceramics could be well sintered at 850°C for 3h. X-ray diffraction analysis showed that tetragonal rutile phase and monoclinic Bi2MoO6 phase coexisted in the ceramic. The permittivity ɛ r changed from 77.5 to 33.5 and the temperature coefficient of resonant frequency τ f value shifted from +348.1 to −37.8ppm/°C as the x value increased from 0.06 to 0.65. The temperature stable microwave dielectric ceramic was obtained when x =0.57 in the xBi2MoO6–(1− x)TiO2 system, and it showed excellent dielectric properties of ɛ r =36.7, Qf=16,800GHz and τ f =0ppm/°C. [Copyright &y& Elsevier]