Cite
Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.
MLA
Maeng, W. J., et al. “Flatband Voltage Control in P-Metal Gate Metal-Oxide-Semiconductor Field Effect Transistor by Insertion of TiO2 Layer.” Applied Physics Letters, vol. 96, no. 8, Feb. 2010, p. 082905. EBSCOhost, https://doi.org/10.1063/1.3330929.
APA
Maeng, W. J., Woo-Hee Kim, Ja Hoon Koo, Lim, S. J., Chang-Soo Lee, Taeyoon Lee, & Hyungjun Kim. (2010). Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer. Applied Physics Letters, 96(8), 082905. https://doi.org/10.1063/1.3330929
Chicago
Maeng, W. J., Woo-Hee Kim, Ja Hoon Koo, S. J. Lim, Chang-Soo Lee, Taeyoon Lee, and Hyungjun Kim. 2010. “Flatband Voltage Control in P-Metal Gate Metal-Oxide-Semiconductor Field Effect Transistor by Insertion of TiO2 Layer.” Applied Physics Letters 96 (8): 082905. doi:10.1063/1.3330929.