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Electrical demonstration of thermally stable Ni silicides on Si1− x C x epitaxial layers
- Source :
-
Microelectronic Engineering . Mar2010, Vol. 87 Issue 3, p306-310. 5p. - Publication Year :
- 2010
-
Abstract
- Abstract: In this paper we report on electrical demonstration of thermally stable Ni silicides. It has been shown that when a sacrificial Si1− x C x epilayer is grown in the source-drain areas of NMOS transistors prior to silicidation, Ni silicides can withstand a 30min anneal at 750°C and demonstrate excellent electrical performance. We have observed carbon segregation at the NiSiC/Si1− x C x interface which can explain the increased NiSiC thermal stability. We have experimentally demonstrated feasibility of CMOS device implementation of thermally stable Ni silicides. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 87
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 47948580
- Full Text :
- https://doi.org/10.1016/j.mee.2009.06.019