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Charge collection efficiencies of planar silicon detectors after reactor neutron and proton doses up to
Charge collection efficiencies of planar silicon detectors after reactor neutron and proton doses up to
- Source :
-
Nuclear Instruments & Methods in Physics Research Section A . Jan2010, Vol. 612 Issue 3, p470-473. 4p. - Publication Year :
- 2010
-
Abstract
- Abstract: The planned luminosity upgrade of the large hadron collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. The innermost devices at a radius about 4cm from the interaction region will have to be able to withstand a combined charged and neutron hadron dose in the order of neutron equivalent particles () per square centimeter over the anticipated 5 year lifespan of the SLHC experiments. Planar, segmented silicon detectors with n-strip readout are one of the many radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. This paper details charge collection efficiency measurements made with silicon sensors that have been irradiated to doses as high as with reactor neutrons and as high as with 26MeV protons and 24GeV protons. In this study, segmented strip readout in either n-bulk (n-in-n) or p-bulk (n-in-p) substrates are considered. Both diode configurations were processed in substrates grown with float zone (FZ) and magnetic Czochralski (MCz) techniques. For the fluences studied, all the strip readout technologies are still viable assuming that adequate bias voltage and cooling can be supplied and low noise, low threshold readout electronics can be designed. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01689002
- Volume :
- 612
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section A
- Publication Type :
- Academic Journal
- Accession number :
- 47603963
- Full Text :
- https://doi.org/10.1016/j.nima.2009.08.005