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SPINTRONIC DEVICES FOR MEMORY AND LOGIC APPLICATIONS.

Authors :
Dieny, B.
Sousa, R.
Prenat, G.
Source :
Annals of the West University of Timisoara, Physics Series. 2009, Vol. 53, p117-119. 3p.
Publication Year :
2009

Abstract

The article discusses the course subject on magnetism which focuses on the discovery and development of spintronic devices for memory and logical applications which include the giant magnetoresistance, low magnetic film sensors, and Magnetoresistive Random Access Memory (MRAM). It notes that the discovery of the ways to manipulate the magnetization of nanostructure through a spin-polarized current offers a major breakthrough in the development of spinelectronics. It adds that electrical currents may have a direct influence on the propagation of domain walls and spin-transfer effects.

Details

Language :
English
ISSN :
12249718
Volume :
53
Database :
Academic Search Index
Journal :
Annals of the West University of Timisoara, Physics Series
Publication Type :
Academic Journal
Accession number :
47598986