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Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Dec2009, Vol. 56 Issue 12, p3097-3105. 9p. 2 Diagrams, 2 Charts, 11 Graphs. - Publication Year :
- 2009
-
Abstract
- Lateral asymmetric channel doping is applied to 45-nm technology NFET devices. The measured effective drain-current enhancement over coprocessed symmetric control devices is 10%. Analysis reveals that the dominant physical mechanism, which accounts for two-third of the total enhanced drain current, is an 8% increase in the source-side injection velocity. The remaining one-third is attributed to the decreased drain-induced barrier lowering. This paper concludes with an analysis of the switching characteristics of CMOS inverters composed of an asymmetric NFET and a companion symmetric PFET and shows a 5% improvement in the delay. The improvement is explained in terms of the increased velocity and 30% reduction in drain junction capacitance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 47399992
- Full Text :
- https://doi.org/10.1109/TED.2009.2032750