Photorefractive InGaAs/GaAs multiple quantum wells in the Franz-Keldysh geometry.

We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz-Keldysh geometry at wavelengths of 0.92-0.94 μm. A maximum two-wave mixing gain of 138 cm[sup -1] and a maximum diffraction efficiency of 1.5x10[sup -4] are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics. We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz-Keldysh geometry at wavelengths of 0.92-0.94 μm. A maximum two-wave mixing gain of 138 cm[sup -1] and a maximum diffraction efficiency of 1.5x10[sup -4] are obtained. The saturation intensity and the spatial ! resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics. We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz-Keldysh geometry at wavelengths of 0.92-0.94 μm. A maximum two-wave mixing gain of 138 cm[sup -1] and a maximum diffraction efficiency of 1.5x10[sup -4] are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]