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Characteristics of n[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal-oxide- semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH[sub 3])[sub 3] and H[sub 2]O vapor.

Authors :
Park, Dae-Gyu
Cho, Heung-Jae
Lim, Kwan-Yong
Lim, Chan
Yeo, In-Seok
Roh, Jae-Sung
Park, Jin Won
Source :
Journal of Applied Physics. 6/1/2001, Vol. 89 Issue 11, p6275. 6p. 10 Graphs.
Publication Year :
2001

Abstract

We report interface and dielectric reliability characteristics of n[sup +] polycrystalline-silicon (poly-Si)/Al[sub 2]O[sub 3]/Si metal-oxide-semiconductor (MOS) capacitors. Al[sub 2]O[sub 3] films were prepared by atomic layer chemical vapor deposition using Al(CH[sub 3])[sub 3] and H[sub 2]O vapor. Interface state density (D[sub it]) and dielectric reliability properties of n[sup +] poly-Si/Al[sub 2]O[sub 3]/Si MOS structures were examined by capacitance-voltage, conductance, current-voltage, and time-dependent dielectric breakdown measurements. The D[sub it] of the n[sup +] poly-Si/Al[sub 2]O[sub 3]/Si MOS system near the Si midgap is approximately 8x10[sup 10] eV[sup -1] cm[sup -2] as determined by the conductance method. Frequency dispersion as small as ∼20 mV and hysteresis of ∼15 mV were attained under the electric field of ±8 MV/cm. The gate leakage current of ∼36 Å effective thickness Al[sub 2]O[sub 3] dielectric measured at the gate vo! ltage of -2.5 V is ∼-5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO[sub 2]). Time-dependent dielectric breakdown data of Al[sub 2]O[sub 3]/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al[sub 2]O[sub 3] gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al[sub 2]O[sub 3]/Si junction are discussed. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
89
Issue :
11
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
4712463
Full Text :
https://doi.org/10.1063/1.1368869