Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors.

The effect of the gate leakage current fluctuations on noise properties of AlGaN/GaN heterostructure field effect transistors (HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). The comparison of the noise properties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate current noise to the HFET's output noise. The effect of the gate current fluctuations on output noise properties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10[sup -3], even a relatively large leakage current I[sub g] (I[sub g]/I[sub d]∼10[sup -3]-10[sup -2], where I[sub d] is the drain current) does not contribute much to the output noise. In HFETs with a relatively small values of α (α∼10[sup -5]-10[sup -4]), the contribution of the leakage current to output noise can be significant even at I[sub g]/I[sub d]∼10[sup -4]-10[sup -3]. For such transistors, a very rapid increase of the 1/f noise with gate bias was observed. The differences in the noise behavior can be linked to the material quality of the AlGaN and GaN layers in different types of HFETs. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]