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Editorial: Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE 2009) Conference.

Authors :
Smowton, P.
Source :
IET Optoelectronics (Institution of Engineering & Technology). Dec2009, Vol. 3 Issue 6, p241-241. 1p.
Publication Year :
2009

Abstract

The article discusses various reports published within the issue, including one on the molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications, another on design and characteristics of staggered InGaN quantum-well light emitting diodes in the green spectral regime and another on semiconductor optoelectronics.

Subjects

Subjects :
*EPITAXY
*OPTOELECTRONICS

Details

Language :
English
ISSN :
17518768
Volume :
3
Issue :
6
Database :
Academic Search Index
Journal :
IET Optoelectronics (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
45659017
Full Text :
https://doi.org/10.1049/iet-opt.2009.9052