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The optical coupling improvement of THz quantum well infrared photodetectors based on the plasmonic induced near-field effect

Authors :
Zhang, Y.M.
Chen, H.B.
Li, Z.F.
Li, N.
Chen, X.S.
Lu, W.
Source :
Physica B. Jan2010, Vol. 405 Issue 2, p552-554. 3p.
Publication Year :
2010

Abstract

Abstract: Near-field effect has been recognized to play an important role in optical coupling of multiple quantum well infrared photodetectors (QWIP). Both the optical near-field effect and the plasmonic effect in the quantum well active region of QWIP device have been studied by the finite difference time-domain (FDTD) method at the optical frequency of 4.2THz. Our numerical results indicate that both the near-field effect and the plasmonic effect can induce an evanescent wave with the electrical component being parallel to the growth direction of quantum well. The induced electrical component in the QWIP growth direction is 2.5 times larger than that of the incident optical fields. The induced polarization can increase the optical coupling efficiency of QWIP and the detectivity of QWIP can be improved at 4.2THz. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
09214526
Volume :
405
Issue :
2
Database :
Academic Search Index
Journal :
Physica B
Publication Type :
Academic Journal
Accession number :
45636236
Full Text :
https://doi.org/10.1016/j.physb.2009.09.063