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Defect Reduction in ArF Immersion Lithography Using Particle Trap Wafers With CVD Thin Films.

Authors :
Matsui, Yoshinori
Onoda, Naka
Nagahara, Seiji
Uchiyama, Takayuki
Source :
IEEE Transactions on Semiconductor Manufacturing. Nov2009, Vol. 22 Issue 4, p438-442. 5p. 2 Black and White Photographs, 1 Chart, 2 Graphs.
Publication Year :
2009

Abstract

Particle trap wafers were applied to ArF immersion lithography to reduce the immersion-related defectivity. Interfacial free energy (γA-particIe) and work of adhesion (WA-particle) between particle trap wafers and particles in immersion water explain the potential of trapping particles by the particle trap wafers. It was found that the treated SiCN chemical vapor deposition wafer performed well as a particle trap wafer and can help defect reduction in immersion lithography. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
22
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
45591995
Full Text :
https://doi.org/10.1109/TSM.2009.2031760