Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures

Abstract: CuInSe2 films were prepared at different deposition temperatures (T D) by successive ionic layer adsorption and reaction method with chelating solutions. Influence of T D on film growth, morphology, crystal structure, and band gap energy was investigated. Results showed that elevation of T D mainly enhanced reaction kinetics and ionic diffusion velocity, resulting in fast growth rate of CuInSe2 films, and maximum 20–30 nm/cycle depended upon T D were acquired. Films with 60 dip-cycles could grow from 180 nm to 1000 nm by elevating T D from 30 °C to 90 °C. Surface roughness of CuInSe2 films was closely related to dip-cycle times and T D. Accelerated growth rate by T D could reduce the dip-cycle times for a required film thickness, which improved quality of film morphology. [Copyright &y& Elsevier]