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The silicon vacancy in SiC
- Source :
-
Physica B . Dec2009, Vol. 404 Issue 22, p4354-4358. 5p. - Publication Year :
- 2009
-
Abstract
- Abstract: The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC. [Copyright &y& Elsevier]
- Subjects :
- *POINT defects
*SILICON
*SILICON carbide
*PHASE transitions
*MAGNETIC resonance
Subjects
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 404
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 44941132
- Full Text :
- https://doi.org/10.1016/j.physb.2009.09.023