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Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys

Authors :
Carvalho, A.
Coutinho, J.
Jones, R.
Barroso, M.
Goss, J.P.
Briddon, P.R.
Source :
Materials Science in Semiconductor Processing. Oct2008, Vol. 11 Issue 5/6, p332-335. 4p.
Publication Year :
2008

Abstract

Abstract: Density-functional theory is used to model interstitial iron and its complexes with aluminum in Si-rich SiGe alloys with Ge concentration up to 8%. Both short-range and long-range defect-Ge interactions are considered. It is found that Fe prefers Si-rich regions. The shifts of the electrical levels of Fe-acceptor pairs are calculated using the marker method. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
13698001
Volume :
11
Issue :
5/6
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
44783820
Full Text :
https://doi.org/10.1016/j.mssp.2008.07.010