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Thermal rectification at water/functionalized silica interfaces.

Authors :
Ming Hu
Goicochea, Javier V.
Michel, Bruno
Poulikakos, Dimos
Source :
Applied Physics Letters. 10/12/2009, Vol. 95 Issue 15, p151903. 3p. 3 Graphs.
Publication Year :
2009

Abstract

Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of silica, self-assembled monolayers (SAMs) at the silica surface and water surrounding this system, by imposing a series of positive and negative heat currents. We have found that in the limit of large heat currents, the thermal conductance at the SAMs-water interface is about 1000 MW/m2 K at room temperature for heat flowing from the SAMs to the water and 650 MW/m2 K for heat flowing from the water to the SAMs, respectively, resulting in a thermal rectification of up to 54%. Analysis of the radial distribution function of oxygen-oxygen atoms in water indicates that the origin of the thermal rectification resides in the strong temperature dependence of the hydrogen bonds in water. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
95
Issue :
15
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
44665218
Full Text :
https://doi.org/10.1063/1.3247882