Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide.

The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density is reduced close to the conduction band edge of 4H-SiC. This electrical improvement is correlated with the decrease in SiCxOy compounds at the SiO2/4H-SiC interface region as confirmed by two independent methods. These results point to the use of H2O2 as an alternative passivating agent of SiO2/4H-SiC interface electrically active defects. [ABSTRACT FROM AUTHOR]