The properties of direct current sputtering deposited InN thin films under different gas flow rates

Abstract: InN thin films were fabricated by reactive direct current magnetron sputtering. Different Ar and N2 flow rates were tried in order to tune the properties of the obtained films. Scanning electron microscopy (SEM) shows that growth of InN on Si (100) follows island growth mode. Energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and O. When Ar flow rate is 75sccm and N2 changes from 25sccm to 150sccm, the atomic ratio of N increases while that of In and O decreases. X-ray diffraction (XRD) and Raman scattering reveal that the film contains hexagonal InN and cubic In2O3. The XRD peak intensity related to cubic In2O3 decreases with the increase of N2 flow rate. The four probe measurement shows that all the samples have very low sheet resistances. The transmission of InN deposited on K9 glass is very low. [Copyright &y& Elsevier]