Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy.

The mechanical behavior of thin buffer layers for InAs/GaAs(111)A heteroepitaxy has been investigated by x-ray diffraction (XRD). XRD θ-2θ spectra are presented for the (220) reflection for two monolayers (MLs) of InAs deposited on GaAs buffer layers of both 20 ML and 150 nm (≅ 460 ML) in thickness. For the thicker buffer layer, the XRD spectrum exhibits a single, symmetric peak at a reflected angle corresponding to the bulk GaAs lattice parameter, while for the thinner one it exhibits asymmetry around the GaAs substrate reflection with the spectrum tailing to lower angle. This indicates that the thin buffer layer possesses a distribution of interlayer distances in the [220] direction that are larger than that of the GaAs substrate. The XRD data agree very well with theoretical calculations in which the thin GaAs buffer layer is modeled as unconstrained at its base. Our results provide direct evidence that thin GaAs buffer layers behave mechanically similarly to compliant substrates. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]