Energy dependence of transient enhanced diffusion and defect kinetics.

Boron, a p-type dopant, experiences transient enhanced diffusion (TED) via interstitials. The boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 10[sup 14]/cm[sup 2] at various energies were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750 °C for 15-135 min to observe the diffusion exhibited by the marker layer and to correlate this with the dissolution of {311} type defects. The diffusion enhancement depends strongly on implant energy but the {311} dissolution rate is weakly dependent. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]