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Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3-δ quantum dots embedded in La0.5Sr0.5CoO3-δ nanotubes.
- Source :
-
Applied Physics Letters . 8/24/2009, Vol. 95 Issue 8, p083125. 3p. 2 Diagrams, 2 Graphs. - Publication Year :
- 2009
-
Abstract
- The sequential resonant tunneling in La0.5Sr0.5CoO3-δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM dots
*MEASUREMENT
*ELECTRIC currents
*ELECTRONS
*SEMICONDUCTORS
*TEMPERATURE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 43944831
- Full Text :
- https://doi.org/10.1063/1.3202759