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Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3-δ quantum dots embedded in La0.5Sr0.5CoO3-δ nanotubes.

Authors :
Wei Liu
Yu Chen
Zuci Quan
Shishang Guo
Meiya Li
Xing-Zhong Zhao
Source :
Applied Physics Letters. 8/24/2009, Vol. 95 Issue 8, p083125. 3p. 2 Diagrams, 2 Graphs.
Publication Year :
2009

Abstract

The sequential resonant tunneling in La0.5Sr0.5CoO3-δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
95
Issue :
8
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
43944831
Full Text :
https://doi.org/10.1063/1.3202759