Back to Search
Start Over
Microwave-Induced Characteristics of (NbN/TiNX)N/NbN Stacked Josephson Junction Arrays.
- Source :
-
IEEE Transactions on Applied Superconductivity . Jun2009 Part 1 of 3, Vol. 19 Issue 3, p987-992. 6p. 1 Chart, 6 Graphs. - Publication Year :
- 2009
-
Abstract
- Stacked (NbN/TiNX)N/NbN (N = 2, 3, 4, 5 and 10) Josephson junctions and their arrays have been fabricated on a Si chip and their microwave-induced characteristics were measured at a temperature around 10 K. To achieve a vertical and smooth edge of an NbN - TiNX multilayer, an inductively coupled plasma reactive ion etching (ICP-RIE) technique was used. Current-voltage characteristics measured for stacks of (NbN/TiNX)N/NbN Josephson junctions without microwave indicated that critical currents for those junctions distribute in a certain range. We defined Ic - spread as (Ic MAX - Ic MIN)/Ic Average to measure the distribution of Ic. The Ic, - spread was minimized when the thickness of intermediate electrodes was d = 50 nm. We also evaluated values of Ic - spread for stacks prepared at different fabrication runs as a function of the number of junctions in a stack N. As a result, we found N = 3 is the maximum for practical use. For arrays, we obtained a constant-voltage step height of about 2 mA for 2048 stacks of double-barrier junctions (N = 2), and about 1 mA for 1 024 stacks of triple-barrier junctions (N = 3). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10518223
- Volume :
- 19
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Applied Superconductivity
- Publication Type :
- Academic Journal
- Accession number :
- 43868861
- Full Text :
- https://doi.org/10.1109/TASC.2009.2018520