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Temperature Dependence of the Energy Relaxation Rate in an RF-SQUID Flux Qubit.
- Source :
-
IEEE Transactions on Applied Superconductivity . Jun2009 Part 1 of 3, Vol. 19 Issue 3, p977-980. 4p. 4 Graphs. - Publication Year :
- 2009
-
Abstract
- From microwave and resonant tunneling spectroscopy measurements we independently obtained all device parameters needed to reconstruct the Hamiltonian of an rf-SQUID flux qubit. Energy relaxation of the qubit as a function of flux bias and temperature was investigated experimentally. It is found that the energy relaxation rate at different flux biases scales to a universal temperature dependence. This universal T-dependence of T1 time agrees well with a theoretical model in which the thermal equilibrium population of the excited states is considered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10518223
- Volume :
- 19
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Applied Superconductivity
- Publication Type :
- Academic Journal
- Accession number :
- 43868859
- Full Text :
- https://doi.org/10.1109/TASC.2009.2019658