Thanks for the Memories.

The article features Robert Dennard, inventor of the Dynamic Random-access Memory (DRAM) and awardee of Institute of Electrical and Electronics Engineering (IEEE) Medal of Honor. He took undergraduate, masters, and doctoral degrees in electrical engineering, and works at the applied research group of International Business Machines Corp. (IBM). He conceptualized the scaling theory of METAL oxide semiconductor field-effect transistors (MOSFET). Information on how he developed DRAM is also noted.