Modeling charge transport in graphene nanoribbons and carbon nanotubes using a Schrödinger-Poisson solver.

Interest in carbon-based electronics has been stimulated in recent years, initially through the discovery of carbon nanotubes, but recently with the formation of graphene layers. In this paper metal-oxide-semiconductor (MOS) systems based on these carbon structures are used to model and compare charge transport within them. Schrödinger’s equation is solved self-consistently with Poisson’s equation, using the scattering matrix method. A tight-binding model is used to determine the energy band structure in graphene. The current-voltage characteristics of MOS devices based on graphene and those based on carbon nanotubes demonstrate significant differences associated with their respective transmission probabilities. [ABSTRACT FROM AUTHOR]