Degenerately Mo-doped In2O3 nanowire arrays on In2O3 microwires with metallic behaviors.

Transparent metallic Mo-doped In2O3 nanowires arrays with three dimensionally branched morphology are epitaxially grown on undoped In2O3 microwires by the vapor-liquid-solid growth mode. The room-temperature resistivity and failure-current density of individual degenerately doped nanowire are measured to be 1.43×10-4 Ω cm and 1.57×107 A/cm2, respectively. The breakdown mechanism of the nanowires at high current density is due to resistive heating and melting. Lateral vacuum electron field emission properties of individual nanowire tip are investigated and an ultralow turn-on voltage of 1.28 V and a large field enhancement factor of 1.02×103 are obtained. [ABSTRACT FROM AUTHOR]